Opis: Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications - Kevin Peter O'Donnell

This book summarises recent progress in the science and technology of rare-earth doped nitrides, providing a snapshot of the field at a critical point in its development. Improved theoretical understanding of the behaviour of f-electrons in solids, driven by accelerating computational capability, has coincided with an improved ability of crystal growers to incorporate rare earth elements reproducibly in wide bandgap semiconductor hosts that are favoured for optoelectronic and spintronic applications. The device possibilities of these advanced materials are promising but by no means well-developed. Following a review of the theoretical background, this book explores the preparation of materials, either through in-situ growth or ion implantation/annealing, the characterisation of these materials and their incorporation in existing and prospective devices. Featuring contributions from leading researchers in Europe, the USA and Japan, the book will be a valuable resource for academics, advanced students and industrial scientists.1.Introduction and overview. Kevin O'DONNELL, Strathclyde, UK. 2.Theoretical background. Robert JONES, Exeter and Benjamin HOURAHINE, Strathclyde, UK. 3.In-situ doping of MBE III-N: RE epilayers. Andrew STECKL and John ZAVADA, Nanolab Cincinatti, USA. 4.RE implantation and annealing of III-Nitrides. Katharina LORENZ and Eduardo ALVEZ, ITN Lisbon, Portugal. 5.Lattice location studies of RE impurities in III-Nitrides. Andre VANTOMME, IKS Leuven, Belgium. 6.Microscopic characterisation of luminescent III-N:RE epilayers. Robert MARTIN, Strathclyde, UK 7.High-resolution optical studies of site multiplicity in III-N:RE. Volkmar DIEROLF, Lehigh, USA. 8.RE-doped III-N quantum dots. Bruno DAUDIN, Grenoble, France. 9.Excitation model for RE ions in solids. Alain BRAUD and Pierre RUTERANA, Caen, France. 10.III-N:RE electroluminescence. Andrew STECKL and John ZAVADA, Nanolab Cincinatti, USA. 11.RE-doped III-N for spintronics applications. Oliver BRANDT, PDI Berlin, Germany. 12.Summary and prospects for future work. Kevin O'DONNELL, Strathclyde, UK.

Szczegóły: Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications - Kevin Peter O'Donnell

Tytuł: Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications
Autor: Kevin Peter O'Donnell
Producent: Springer Verlag
ISBN: 9789048128761
Rok produkcji: 2009
Ilość stron: 420
Oprawa: Twarda
Waga: 0.77 kg

Recenzje: Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications - Kevin Peter O'Donnell